| PART |
Description |
Maker |
| APT2X60D40J APT2X61D40J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 400V 60A
|
ADPOW[Advanced Power Technology]
|
| APT2X101D40J APT2X100D40J |
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 400V 100A
|
ADPOW[Advanced Power Technology]
|
| APT2X101D20J APT2X100D20J |
ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 双超快软恢复整流二极
DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 200V 100A
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| STE100N20 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE
|
STMicroelectronics
|
| STE139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in ISOTOP package
|
ST Microelectronics
|
| APT100GT120JRDQ4 |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60;
|
MICROSEMI POWER PRODUCTS GROUP
|
| STE38NB50 5564 |
N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.11Ω- 38A条，1000V的集电极PowerMESHTM MOSFET的（不适用沟道MOSFET的）
N - CHANNEL PowerMESH MOSFET
N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 28333-PCN-001-A |
Mold Compound and Die Attach Change for ETQFP Package
|
M/A-COM Technology Solutions, Inc.
|
| APT75GN120J |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 68; 124 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| BZT52C4V7T |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
